Method for producing conductive material, conductive material obtained by the method, electronic device containing the conductive material, light-emitting device, and method for producing light-emitting device

ABSTRACT

An object of the present invention is to provide a method for producing a conductive material that allows a low electric resistance to be generated, and that is obtained by using an inexpensive and stable conductive material composition containing no adhesive. The conductive material can be provided by a producing method that includes the step of sintering a first conductive material composition that contains silver particles having an average particle diameter (median diameter) of 0.1 μm to 15 μm, and a metal oxide, so as to obtain a conductive material. The conductive material can be provided also by a method that includes the step of sintering a second conductive material composition that contains silver particles having an average particle diameter (median diameter) of 0.1 μm to 15 μm in an atmosphere of oxygen or ozone, or ambient atmosphere, at a temperature in a range of 150° C. to 320° C., so as to obtain a conductive material.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a Divisional under 35 U.S.C. §120 of co-pending U.S.application Ser. No. 12/596,339 which is the National Stage Entry ofPCT/JP2009/050212 filed on Jan. 9, 2009; and this application claimspriority under 35 U.S.C. §119 of Application No. 2008-007583 filed inJapan on Jan. 17, 2008. The entire contents of all these applicationsare hereby incorporated by reference.

TECHNICAL FIELD

The present invention relates to a method for producing a conductivematerial, a conductive material obtained by the method, an electronicdevice containing the conductive material, a light-emitting device, anda method for producing a light-emitting device.

BACKGROUND ART

Conventionally, a method for producing copper wiring by applying acopper foil over a substrate and etching the same has been usedpredominantly. However, this producing method, using etching, has aproblem that a large amount of liquids and materials are wasted.

Then, the following method for producing a wiring board has been knownas a method that does not use etching; a paste-form conductivecomposition containing metal (e.g. silver, copper, etc.) particleshaving a particle diameter of a micron order and an adhesive (e.g.epoxy-based adhesive, acrylic adhesive, silicone-based adhesive, etc.)is applied over a substrate, and is heated at 150° C. to 180° C. (see,for example, Non-Patent Document 1). By this producing method, distancesbetween metal particles in the conductive paste are decreased when theadhesive is heated and hardened, and consequently the metal particlesbecome dense and allow current to pass therethrough, whereby wiring isproduced. With this producing method, however, an electric resistanceobtained is about 5×10⁻⁵ Ωcm, which is relatively high for practicalapplication, and therefore, a lower electric resistance has beendemanded.

Another method has been known also, in which a paste-form conductivecomposition obtained by dispersing microparticles of a silver compoundsuch as silver oxide in a reducing organic solvent is applied over asubstrate, and is heated at the vicinity of 200° C., whereby wiring isproduced (see, for example, Patent Document 1). By this producingmethod, microparticles of a silver compound such as silver oxide in thepaste change to silver particles when the composition is heated at thevicinity of 200° C., and consequently the silver particles are connectedand allow current to pass therethrough, whereby wiring is produced.However, this producing method has the following problems: since thismethod involves a quantitative reduction reaction of the microparticlesof the silver compound such as silver oxide, an intense reaction withthe reducing organic solvent occurs, and owing to a large amount of gasgenerated, such as a gas generated by the decomposition of the reducingorganic solvent and oxygen gas generated by the reduction of the silvercompound, irregular voids are formed in the conductive composition,which become stress concentration points that make the conductivecomposition easily destroyed and dangerous upon handling. A methodmodified in such a manner that silver particles of a micron order aremixed in the composition in order to solve these problems has been knownalso, but this merely provides a slight improvement, though the degreemay vary, since the producing method is based on, as the principle, themetal connection caused by the reduction of microparticles of a silvercompound such as silver oxide.

Further, a conductive composition containing silver oxide microparticlesand a reducing agent that reduces the same has been known (see, forexample, Patent Document 2). This conductive composition also has aproblem in that a high-temperature reaction heat is generated, whichcauses a gas to be generated, as in the above-described case.

A granular silver compound with an organic compound having 1 to 8 carbonatoms being adhered to surfaces of particles has been known (see, forexample, Patent Document 3). When this silver compound is heated, theorganic compound on the surfaces act as a reducing agent, and as aresult, the granular silver compound can be reduced to silver. However,this granular silver compound also has a problem in that ahigh-temperature reaction heat is generated, which causes a gas to begenerated, as in the above-described case.

A conductive paste composed of silver, silver oxide, and an organiccompound having a property of reducing silver oxide has been known (see,for example, Patent Document 4). This conductive paste also has aproblem in that a high-temperature reaction heat is generated, whichcauses a gas to be generated, as in the above-described case.

A method for producing a conductive material has been known, in which aporous conductive material having a voidage of 20% to 60% and having acontent of an organic substance of 20% or less with respect to the massthereof, which is obtained by heating a composition composed of silveroxide (I) Ag₂O so as to change the silver oxide into silver, issubjected to plating additionally (see, for example, Patent Document 5).

Another method also has been known, in which a paste-form conductivecomposition containing a low crystallized silver filler having aparticle diameter of a micron order and silver nanoparticles is appliedover a substrate, and is heated at the vicinity of 200° C., wherebywiring is produced (see, for example, Patent Document 6). By thisproducing method, when the foregoing composition is heated at thevicinity of 200° C., the silver nanoparticles are molten or sintered,and fused so as to adhere to one another, and allow current to passtherethrough, whereby wiring is produced. In this producing method,however, there is a problem that the silver nanoparticles cost high.

In the case of the above-described producing methods, it is necessary touse an adhesive that makes it difficult to decrease an electricresistance, to use microparticles of a silver compound as a principalmaterial, such as silver oxide being unstable and having a strongreducing tendency, or to use a conductive composition containingexpensive silver nanoparticles.

In the case that such a material of a conventional technique is appliedto electronic components as a bonding material for device electrodes,die attaches, and microbumps, this material applied, for example, in alight-emitting device is used for mounting light-emitting elements on asubstrate such as a lead frame or a printed circuit board.Light-emitting elements in recent years have a problem in that anadhesive discolors owing to heat generated by the application of highcurrent, and an electric resistance varies with time as an organiccomponent of a resin or the like is degraded by heat and light.Particularly in the case of the method in which the bonding completelydepends on the adhesion power of the adhesive, it is concerned thatthere might occur the following critical problem: when an electroniccomponent is mounted by soldering, the bonding material may lose anadhesion power under the solder melting temperature, and separationoccurs, which results in failure of lighting.

-   Patent Document 1: JP 2003-309352 A-   Patent Document 2: JP 2004-253251 A-   Patent Document 3: JP 2005-200604 A-   Patent Document 4: JP 2005-267900 A-   Patent Document 5: JP 2006-24808 A-   Patent Document 6: 2005-129303 A-   Non-Patent Document 1: Yi Li, C. P. Wong, “Recent advances of    conductive adhesives as a lead-free alternative in electronic    packaging: Materials, processing, reliability and applications”,    Materials Science and Engineering, 2006, R 51, pp. 1-35.

DISCLOSURE OF INVENTION Problem to be Solved by the Invention

It is an object of the present invention to provide a method forproducing a conductive material that allows a low electric resistance tobe generated, and that is obtained by using an inexpensive and stableconductive material composition containing no adhesive.

Means for Solving Problem

It has been known conventionally that silver nanoparticles fuse at a lowtemperature, but it has not been known that silver particles of a micronorder fuse at a low temperature. The inventors of the present inventionfound that silver particles of a micron order fuse when they are heatedat a low temperature under oxidizing conditions such as the presence ofan oxide or oxygen, and completed the present invention based on theforegoing finding.

The present invention is a method for producing a conductive material,including the step of sintering a first conductive material compositionthat contains silver particles having an average particle diameter(median diameter) of 0.1 μm to 15 μm, and a metal oxide, so as to obtaina conductive material. Hereinafter, in the present specification, thisproducing method is referred to as a first method for producing aconductive material.

The present invention is a method for producing a conductive material,including the step of sintering a second conductive material compositionthat contains silver particles having an average particle diameter(median diameter) of 0.1 μm to 15 μm in an atmosphere of oxygen orozone, or ambient atmosphere, at a temperature in a range of 150° C. to320° C., so as to obtain a conductive material. Hereinafter, in thepresent specification, this producing method is referred to as a secondmethod for producing a conductive material.

Effects of the Invention

The producing methods of the present invention have an advantage in thata conductive material that allows a low electric resistance to begenerated can be produced. Further, the producing method of the presentinvention has an advantage in that a conductive material can be producedwith use of an inexpensive and stable conductive material compositioncontaining no adhesive.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is an electron micrograph showing a conductive compositionobtained in Example 2.

FIG. 2 is an electron micrograph showing a conductive compositionobtained in Reference Example 8.

FIG. 3 is a graph showing variation in amounts applied by stamping inExample 34.

DESCRIPTION OF THE INVENTION

The inventors of the present invention found the following. When acomposition containing silver particles having an average particlediameter of 0.1 μm to 15 μm was sintered in the presence of a metaloxide or in an atmosphere of oxygen or ozone, or ambient atmosphere, asan oxidizer, the silver particles fused, for example, even at atemperature in the vicinity of 150° C., whereby a conductive materialwas obtained. On the other hand, in nitrogen atmosphere, when acomposition containing silver particles having an average particlediameter of 0.1 μm to 15 μm was sintered, a conductive material was notobtained at a low temperature in the vicinity of 150° C. Based on thisfinding, the inventors of the present invention completed the presentinvention, i.e., a method for producing a conductive material whichincludes the step of sintering a composition that contains silverparticles having an average particle diameter of 0.1 μM to 15 μm, in thepresence of a metal oxide, or in an atmosphere of oxygen or ozone, orambient atmosphere, as an oxidizer.

The conventional method for producing a conductive material, which usesmicroparticles of a silver compound such as silver oxide and a reducingorganic solvent, has a problem in that a high-temperature reaction heatis generated, whereby gas is generated, as described above. On the otherhand, the method for producing a conductive material according to thepresent invention makes it possible to produce a conductive materialwithout the problem of a gas generated by decomposition caused by heatof abrupt reaction.

In the method of the present invention for producing a conductivematerial, the mechanism of the formation of a conductive material is notclear, but can be presumed as follows. When a composition containingsilver particles having an average particle diameter of 0.1 μm to 15 μmis sintered in an atmosphere of oxygen or ozone, or ambient atmosphereas an oxidizer, the silver particles partially are oxidized, and silveroxide thus formed by the oxidation, at portions in contact with thesilver particles, catalytically exchanges oxygen with the silverparticles, so as to repeatedly undergo oxidation-reduction reactions.Through such a step, the conductive material is formed. When acomposition containing silver particles having an average particlediameter of 0.1 μm to 15 μm is sintered in the presence of a metal oxideas an oxidizer, the following can be presumed: the metal oxide alreadycontained in the composition, at portions in contact with the silverparticles, catalytically exchanges oxygen with the silver particles, soas to repeatedly undergo oxidation-reduction reactions. Through thisstep, the conductive material is formed. Since the conductive materialis produced by the mechanism thus presumed, the method of the presentinvention for producing a conductive material does not need the use of aconductive material composition containing an adhesive, and hence,allows a conductive material that generates a low electric resistance tobe obtained using an inexpensive and stable conductive materialcomposition.

As described above, the present invention is a first method forproducing a conductive material, including the step of sintering a firstconductive material composition that contains silver particles having anaverage particle diameter (median diameter) of 0.1 μm to 15 μm, and ametal oxide, so as to obtain a conductive material. With this firstproducing method, a conductive material having a low resistance can beprovided. Further, with the first producing method, since silverparticles of a micron order that do not need a special processing can befused as-is, a conductive material can be produced easily. Stillfurther, with the first producing method, a conductive material can beproduced using easily-available and inexpensive silver particles. Stillfurther, the first producing method has an advantage in the following:it is unnecessary to use an adhesive, microparticles of an unstablesilver compound, etc., as raw materials. Still further, the firstproducing method has an advantage in the following: since only portionsat which the silver particles are in contact with one another are fusedby sintering, voids occur, whereby a film-form conductive materialhaving considerable flexibility can be formed.

As described above, the present invention is a second method forproducing a conductive material, including the step of sintering asecond conductive material composition that contains silver particleshaving an average particle diameter (median diameter) of 0.1 μm to 15 μmin an atmosphere of oxygen or ozone, or ambient atmosphere at atemperature in a range of 150° C. to 320° C., so as to obtain aconductive material. With this second producing method, a conductivematerial having a low resistance can be provided. Further, with thesecond producing method, since silver particles of a micron order thatdo not need a special processing can be fused as-is, a conductivematerial can be produced easily. Still further, with the secondproducing method, a conductive material can be obtained, with an amountof generated heat being reduced. Still further, with the secondproducing method, a conductive material can be produced usingeasily-available and inexpensive silver particles. Still further, thesecond producing method has an advantage in the following: it isunnecessary to use an adhesive, microparticles of an unstable silvercompound, etc. as raw materials. Still further, the second producingmethod has an advantage in the following: since only portions at whichthe silver particles are in contact with one another are fused bysintering, voids occur, whereby a film-form conductive material havingconsiderable flexibility can be formed.

In the first method for producing a conductive material, the firstconductive material composition preferably further contains either anorganic solvent having a boiling point of 300° C. or lower, or water.This is because in the first method for producing a conductive materialaccording to the present invention, the organic solvent or waterimproves the conformability between the silver particles, therebypromoting the reaction between the silver particles and the metal oxide.In the first method for producing a conductive material, since thesilver particles can be contained in the organic solvent or water at ahigh concentration, without the workability being impaired, the materialhas smaller shrinkage in volume after sintered. Therefore, it is easy toestimate dimensions of the conductive material to be obtained. Stillfurther, the organic solvent preferably contains either a lower alcoholhaving one or more substituents selected from the group consisting oflower alkoxy, amino, and halogen, or a lower alcohol other than thesame. Such an organic solvent is preferred since it has high volatility,and therefore, residues of the organic solvent in the conductivematerial obtained after the first conductive material composition issintered can be reduced.

In the first method for producing a conductive material, the sinteringstep preferably is carried out in an atmosphere of oxygen or ozone, orambient atmosphere.

In the first method for producing a conductive material, the sinteringstep preferably is carried out at a temperature in a range of 150° C. to320° C.

In the first method for producing a conductive material, the metal oxidepreferably is one or more selected from the group consisting of AgO,Ag₂O, and Ag₂O₃.

In the first method for producing a conductive material, a content ofthe metal oxide in the first conductive material composition is 5percent by weight (wt %) to 40 wt % with respect to the silverparticles.

In the first method for producing a conductive material, the metal oxidepreferably has an average particle diameter (median diameter) of 0.1 μmto 15 μm.

Further, the present invention is a conductive material obtained by thefirst or second method for producing a conductive material according tothe present invention, wherein the silver particles are fused to oneanother, and a voidage is 5 percent by volume (vol %) to 35 vol %. Theconductive material has an advantage of a high bonding strength.

The conductive material of the present invention preferably has acontent of silver of 70 wt % or more. Further, the conductive materialof the present invention preferably has an electric resistance of5.0×10⁻⁵ Ω·cm or less.

An electronic device of the present invention is an electronic devicecontaining the conductive material obtained by the first or secondmethod for producing a conductive material according to the presentinvention, wherein the conductive material is used as a material forelectric wiring, component electrodes, die attaches, or microbumps.

A light-emitting device of the present invention is a light-emittingdevice containing the conductive material obtained by the first methodfor producing a conductive material according to the present invention,wherein the conductive material is used as a bonding material forbonding a light-emitting element to a wiring board or a lead frame.Hereinafter, in the present specification, this light-emitting device isreferred to as a first light-emitting device.

A light-emitting device of the present invention is a light-emittingdevice containing the conductive material obtained by the second methodfor producing a conductive material according to the present invention,wherein the conductive material is used as a bonding material forbonding a light-emitting element to a wiring board or a lead frame.Hereinafter, in the present specification, this light-emitting device isreferred to as a second light-emitting device.

A light-emitting device of the present invention is a light-emittingdevice containing a conductive material, the conductive material beingobtained by heating a conductive paste containing silver particleshaving an average particle diameter (median diameter) of 0.1 μm to 15 μmand alcohol at 150° C. to 300° C., wherein the conductive material isused as a bonding material for bonding a light-emitting element to awiring board or a lead frame. Hereinafter, in the present specification,this light-emitting device is referred to as a third light-emittingdevice.

In the third light-emitting device of the present invention, the alcoholpreferably is either a lower alcohol, or a lower alcohol having one ormore substituents selected from the group consisting of lower alkoxy,amino, and halogen.

In the first, second, and third light-emitting devices of the presentinvention, the wiring board preferably includes at least one selectedfrom the group consisting of a ceramic substrate containing aluminumoxide, aluminum nitride, zirconium oxide, zirconium nitride, titaniumoxide, titanium nitride, or a mixture of any of these; a metal substratecontaining Cu, Fe, Ni, Cr, Al, Ag, Au, Ti, or an alloy of any of these;a glass epoxy substrate; and a BT resin substrate.

In the first, second, and third light-emitting devices of the presentinvention, the lead frame preferably includes a metal member containingCu, Fe, Ni, Cr, Al, Ag, Au, Ti, or an alloy of any of these.

In the first, second, and third light-emitting devices of the presentinvention, the wiring board or the lead frame preferably is coveredfurther with Ag, Au, Pt, Sn, Cu, Rh, or an alloy of any of these.

Further, a method for producing the first light-emitting deviceaccording to the present invention includes the steps of applying afirst conductive material composition that contains silver particleshaving an average particle diameter (median diameter) of 0.1 μm to 15μm, and a metal oxide, over the wiring board or the lead frame; placingthe light-emitting element on the first conductive material composition,so as to obtain a light-emitting device precursor; and sintering thelight-emitting device precursor, so as to obtain a light-emittingdevice.

Still further, a method for producing the second light-emitting deviceaccording to the present invention includes the steps of applying asecond conductive material composition that contains silver particleshaving an average particle diameter (median diameter) of 0.1 μm to 15 μmover the wiring board or the lead frame; placing the light-emittingelement on the second conductive material composition, so as to obtain alight-emitting device precursor; and sintering the light-emitting deviceprecursor in an atmosphere of oxygen or ozone, or ambient atmosphere, at150° C. to 320° C., so as to obtain a light-emitting device.

Still further, a method for producing the third light-emitting deviceaccording to the present invention includes the steps of applying aconductive paste that contains silver particles having an averageparticle diameter (median diameter) of 0.1 μm to 15 μm and alcohol overthe wiring board or the lead frame; placing the light-emitting elementon the conductive paste, so as to obtain a light-emitting deviceprecursor; and sintering the light-emitting device precursor at 150° C.to 300° C., so as to obtain a light-emitting device.

As the silver particles in the present invention, regarding the type asto the average particle diameter (median diameter), silver particles ofone type may be used, or alternatively, silver particles of two or moretypes may be mixed and used. In the case where the silver particles isof one type, the average particle diameter (median diameter) is 0.1 μmto 15 μm, preferably 0.1 μm to 10 μm, and more preferably 0.3 μm to 5μm. In the case where the silver particles of two or more types aremixed, for example, average particle diameters (median diameters) of thetwo types are 0.1 μm to 15 μm and 0.1 μm to 15 μm in combination,preferably 0.1 μm to 15 μm and 0.1 μm to 10 μm in combination, and morepreferably 0.1 μm to 15 μm and 0.3 μm to 5 μm in combination. In thecase where the silver particles of two or more types are mixed, thecontent of the silver particles of the type having an average particlediameter (median diameter) of 0.1 μm to 15 μm is, for example, 70 wt %or more, preferably 80 wt % or more, and more preferably 90 wt % ormore. With this, the electric resistance can be decreased.

The average particle diameter (median diameter) of silver particles inthe present invention can be measured by a laser method. It should benoted that the “average particle diameter (median diameter)” means avalue where an accumulated frequency by volume is 50%, which is derivedfrom a particle diameter distribution.

The silver particles in the present invention have a specific surface of0.5 m²/g to 3 m²/g, preferably 0.6 m²/g to 2.5 m²/g, and more preferably0.6 m²/g to 2 m²/g. With this, an area where adjacent silver particlesare in contact with each other can be increased. The specific surface ofa silver particle as a principal material of the conductive materialcomposition of the present invention can be measured by a BET method.

Though the shape of a silver particle in the present invention is notlimited, examples of the shape include a spherical shape, a flat shape,and a polyhedral shape. The shapes of the silver particles having anaverage particle diameter (median diameter) in a certain range areuniform preferably. In the case where silver particles of two or moretypes with different average particle diameters (median diameters) thatare mixed together are used as the silver particles in the presentinvention, the respective types regarding the average particle diameters(median diameters) may have the same shape or different shapes. Forexample, when silver particles of two types having an average particlediameter (median diameter) of 3 μm and an average particle diameter(median diameter) of 0.3 μm are mixed, the silver particles having anaverage particle diameter (median diameter) of 0.3 μm may have aspherical shape each, while the silver particles having an averageparticle diameter (median diameter) of 3 μm may have a flat shape each.

Examples of the metal oxide in the first conductive material compositionof the present invention include silver oxides (e.g. AgO, Ag₂O, andAg₂O₃); chlorites (e.g. potassium chlorite, sodium chlorite, and copperchlorite); chlorates; chlorates (e.g. potassium chlorate, bariumchlorate, calcium chlorate, sodium chlorate, and ammonium chlorate);perchlorates (e.g. potassium perchlorate, sodium perchlorate, andammonium perchlorate); bromates (e.g. potassium bromate, sodium bromate,and magnesium bromate); iodates (e.g. potassium iodate, sodium iodate,and ammonium iodate); inorganic peroxides (e.g. potassium peroxide,sodium peroxide, calcium peroxide, magnesium peroxide, barium peroxide,and lithium peroxide); nitrates (e.g. potassium nitrate, sodium nitrate,ammonium nitrate, uranyl nitrate, calcium nitrate, silver nitrate, iron(II) nitrate, iron (III) nitrate, copper (II) nitrate, lead (II)nitrate, and barium nitrate); permanganic acid; permanganates (e.g.potassium permanganate, ammonium permanganate, sodium permanganate, zincpermanganate, magnesium permanganate, calcium permanganate, and bariumpermanganate); dichromates (e.g. ammonium dichromate, and potassiumdichromate); periodates (e.g. sodium periodate); periodic acid (e.g.metaperiodic acid); chromium oxides (e.g. chromium trioxide); leadoxides (e.g. lead dioxide); iodine oxides; nitrites (e.g. potassiumnitrite, sodium nitrite, and calcium nitrite); hypochlorites (e.g.calcium hypochlorite); chlorinated isocyanuric acids (e.g.trichlorinated isocyanuric acid); peroxodisulfates (e.g. potassiumperoxodisulfate, and sodium peroxodisulfate); and peroxoborates (e.g.potassium peroxoborate, sodium peroxoborate, and ammonium peroxoborate).

The metal oxide in the first conductive material composition of thepresent invention preferably is one or more selected from the groupconsisting of AgO, Ag₂O, and Ag₂O₃. These metal oxides promote theoxidation reaction of the silver particles, thereby, as a result,allowing the metal bonding to be achieved at a relatively lowtemperature. These metal oxides are preferable since they are decomposedby heat upon sintering, and thereafter, become silver. In the firstconductive material composition of the present invention, the metaloxide more preferably is Ago. AgO as the metal oxide has a strong powerof oxidation, and an added amount of the metal oxide therefore can bereduced. As a result, the electric resistance of the obtained conductivematerial is decreased, and the mechanical strength of the conductivematerial is improved.

As the metal oxide, one type having one average particle diameter(median diameter) may be used, or a mixture of two types havingdifferent average particle diameters may be used. In the case where themetal oxide is of one type, the metal oxide preferably has an averageparticle diameter (median diameter) of 0.1 μm to 15 μm. This is becausein the case where the metal oxide has the above-described averagediameter, it is possible to provide an excellent workability and toenable low-cost production. Further, in the case where the metal oxideis of one type, the metal oxide preferably has an average particlediameter (median diameter) of 0.1 μm to 10 μm, and more preferably, 0.3μm to 5 μm. In the case where the metal oxides of two or more types aremixed, average particle diameters (median diameters) of the two typesare, for example, 0.1 μm to 15 μm and 0.1 μm to 15 μm in combination,preferably 0.1 μm to 15 μm and 0.1 μm to 10 μm in combination, and morepreferably 0.1 μm to 15 μm and 0.3 μm to 5 μm in combination. In thecase where two or more of the metal oxides are mixed, the content of thetype having an average particle diameter (median diameter) of 0.1 μm to15 μm is, for example, 70 wt % or more, preferably 80 wt % or more, andmore preferably 90 wt % or more.

In the present invention, the first conductive material compositionpreferably further contains either an organic solvent having a boilingpoint of 300° C. or lower, or water. This is because in the first methodfor producing a conductive material according to the present invention,the organic solvent or water improves the conformability between thesilver particles, thereby promoting the reaction between the silverparticles and the metal oxide. In the present invention, the secondconductive material composition may further contain either an organicsolvent having a boiling point of 300° C. or lower, or water. This isbecause the organic solvent or water improves the conformability betweenthe silver particles, thereby promoting the reaction between the silverparticles and the metal oxide.

In the present invention, the organic solvent preferably contains eithera lower alcohol, or a lower alcohol having one or more substituentsselected from the group consisting of lower alkoxy, amino, and halogen.The reason is as follows: such an organic solvent has high volatility,and therefore, residues of the organic solvent in the conductivematerial obtained after the first conductive material composition issintered can be reduced. In the second conductive material compositionof the present invention, the organic solvent may contain either a loweralcohol, or a lower alcohol having one or more substituents selectedfrom the group consisting of lower alkoxy, amino, and halogen. Thereason is as follows: such an organic solvent has high volatility, andtherefore, residues of the organic solvent in the conductive materialobtained after the first conductive material composition is sintered canbe reduced. Examples of the lower alcohol include a lower alcohol havingan alkyl group with 1 to 6 carbon atoms, and 1 to 3, or preferably 1 to2, hydroxy groups. Examples of the lower alkyl group includestraight-chain or branched-chain alkyl groups such as methyl group,ethyl group, n-propyl group, i-propyl group, n-butyl group, i-butylgroup, sec-butyl group, t-butyl group, n-pentyl group, i-pentyl group,sec-pentyl group, t-pentyl group, 2-methylbutyl group, n-hexyl group,1-methylpentyl group, 2-methylpentyl group, 3-methylpentyl group,4-methylpentyl group, 1-ethylbutyl group. 2-ethylbutyl group,1,1-dimetylbutyl group, 2,2-dimetylbutyl group, 3,3-dimetylbutyl group,and 1-ethyl-1-methylpropyl group. Examples of a lower alcohol having analkyl group with 1 to 6 carbon atoms and 1 to 3 hydroxy groups includemethanol, ethanol, ethylene glycol, n-propanol, i-propanol, triethyleneglycol, n-butanol, i-butanol, sec-butanol, t-butanol, n-pentanol,i-pentanol, sec-pentanol, t-pentanol, 2-methyl butanol, n-hexanol,1-methyl pentanol, 2-methyl pentanol, 3-methyl pentanol, 4-methylpentanol, 1-ethyl butanol, 2-ethyl butanol, 1,1-dimethyl butanol,2,2-dimethyl butanol, 3,3-dimethyl butanol, and 1-ethyl-1-methylpropanol.

In the lower alcohol having one or more substituents selected from thegroup consisting of lower alkoxy, amino, and halogen, the substituent isas follows. Examples of the lower alkoxy include the lower alkyl grouphaving a substitute of —O—. Examples of the lower alkoxy includemethoxy, ethoxy, n-propoxy, i-propoxy, n-butoxy, i-butoxy, sec-butoxy,t-butoxy, and n-pentyloxy. Examples of the halogen include fluorine,bromine, chlorine, and iodine.

Examples of the lower alcohol having not one or more substituentsselected from the group consisting of lower alkoxy, amino, and halogeninclude methoxymethanol, 2-methoxyethanol, 2-ethoxyethanol,2-chloroethanol, and ethanolamine.

The boiling point of the organic solvent preferably is 300° C. or lower.More preferably, the foregoing boiling point is 150° C. to 250° C. Thismakes it possible to suppress variation in the viscosity of theconductive material composition at room temperature owing tovolatilization of the organic solvent, thereby improving theworkability, and further, it is possible to allow the organic solvent tovaporize completely when heated.

Though the added amount of the organic solvent is not limitedparticularly, since the necessary viscosity thereof varies with themethods of application of the conductive material composition. However,in order to reduce the voidage of the conductive material, the addedamount of the same preferably is 30 wt % or less.

In the present invention, the sintering step may be carried out innon-oxidizing atmosphere, ambient atmosphere, vacuum atmosphere, oxygenatmosphere, mixture gas atmosphere, or airflow. In the first method forproducing a conductive material according to the present invention, thesintering step preferably is carried out in atmosphere of oxygen orozone, or ambient atmosphere. The reason is as follows: in the casewhere the sintering step is carried out in the foregoing atmosphere, theoxidation reaction is promoted during the sintering step.

In the present invention, the sintering step preferably is carried outat a temperature in a range of 150° C. to 320° C. The reason is asfollows: in the case where the sintering step is carried out at atemperature in the foregoing range, the metal bonding can be achieved ata temperature lower than a melting point of a resin package on which asemiconductor element or the like is mounted. Further, the sinteringstep preferably is carried out at a temperature in a range of 160° C. to260° C., or more preferably in a range of 180° C. to 200° C.

The content of the metal oxide in the first conductive materialcomposition of the present invention preferably is 5 wt % to 40 wt %with respect to the silver particles. This is because with the foregoingcontent, the conductive material obtained has a greater shear strength.The content of the metal oxide more preferably is 5 wt % to 30 wt %, andfurther preferably 10 wt %, with respect to the silver particles.

The conductive material of the present invention may contain particlesof a conductive metal other than silver. Examples of the conductivemetal include palladium, platinum, gold, and copper. Particles of theconductive metal has an average particle diameter (median diameter) of,for example, 0.1 μm to 15 μm, preferably 0.1 μm to 10 μm, and morepreferably 0.3 μm to 5 μm. Further, the particles of the conductivemetal have a specific area of, for example, 0.5 m²/g to 3 m²/g,preferably 0.6 m²/g to 2.5 m²/g, and more preferably 0.6 m²/g to 2 m²/g.

Further, the present invention is a conductive material obtained byeither the first or second method for producing a conductive material,in which the silver particles are fused to one another, and a voidage is5 vol % to 35 vol %. The conductive material has an advantage of a highbonding strength. In the conductive material, the voidage preferably is5 vol % to 25 vol %, and more preferably 5 vol % to 15 vol %.

The conductive material of the present invention preferably has acontent of silver of 70 wt % or more. This is because this conductivematerial has a great bonding strength. The content of silver morepreferably is 85 wt % or more, and further preferably 90 wt % to 100 wt%.

The conductive material of the present invention preferably has anelectric resistance of 5.0×10⁻⁵ Ω·cm or less. This is because thisconductive material has a low electric resistance. The electricresistance more preferably is 1.0×10⁻⁵ Ω·cm, and further preferably7.0×10⁻⁶ Ω·cm.

Further, an electronic device of the present invention is an electronicdevice containing the conductive material obtained by the first orsecond producing method of the present invention, wherein the conductivematerial is used as a material for electric wiring, componentelectrodes, die attaches, or microbumps. The electronic device, obtainedusing the foregoing conductive material, has an advantage of asufficiently small electric resistance, and less variation in theelectric resistance with time. The electronic device, obtained using theforegoing conductive material, has an advantage of high reliability,without a possibility of separation of bonded parts owing to a thermalshock.

With the present invention, it is possible to obtain a light-emittingdevice including a light-emitting element subjected to metal bondingwith the foregoing conductive material as a bonding material. Examplesof a method for bonding a light-emitting element and a wiring board,etc., include, generally, a method using an insulation adhesive, amethod using an organic bonding material such as a conductive adhesivein which a conductive metal filler is dispersed, and a method using ametal bonding material such as a high-temperature lead solder or AuSueutectic. The method using an organic bonding material, as describedabove, has a problem in that the organic component in the materialdegrades due to light or heat, and as a result causes the color or thestrength to decrease, whereby the lifetime of the light-emitting devicedecreases. The method using a metal bonding material has a problem inthat a plastic member of a light-emitting device significantly degradesdue to heat since it is exposed to a high temperature over 300° C. uponbonding. In contrast, in the producing method of the present invention,the conductive material composition contains silver as a principalcomponent, and does not need an adhesive. Therefore, if the conductivematerial obtained by the producing method of the present invention isused as a bonding material, it hardly is affected by light or heat, anda temperature required upon bonding in the foregoing producing method isin a range of 150° C. to 320° C., which is low. Therefore, it ispossible to prevent a plastic member in a light-emitting device fromdegrading due to heat, and hence, the foregoing method is preferable.Further, the method for producing a conductive material according to thepresent invention does not cause a problem of a gas generated bydecomposition caused by heat of abrupt reaction. Therefore, theconductive material obtained, in which the formation of irregular voidsis suppressed, is excellent as a bonding material.

A light-emitting device of the present invention is a light-emittingdevice (first light-emitting device) containing a conductive materialobtained by the first method for producing a conductive materialaccording to the present invention, wherein the conductive material isused as a bonding material for bonding a light-emitting element to awiring board or a lead frame. Using the foregoing conductive material,the first light-emitting device obtained has an advantage in that it hasa sufficiently small electric resistance, and less variation in theelectric resistance with time. Further, using the foregoing conductivematerial, the first light-emitting device obtained has an advantage inthat the degradation and discoloration of the wiring board or the leadframe is suppressed. Still further, the first light-emitting device ofthe present invention has advantages in that light output therefrom hasless decrease with time even if the device is driven for a long time,and that the device has long lifetime.

A light-emitting device of the present invention is a light-emittingdevice (second light-emitting device) containing a conductive materialobtained by the second method for producing a conductive materialaccording to the present invention, wherein the conductive material isused as a bonding material for bonding a light-emitting element to awiring board or a lead frame. Using the foregoing conductive material,the second light-emitting device obtained has an advantage in that ithas a sufficiently small electric resistance, and less variation in theelectric resistance with time. Further, using the foregoing conductivematerial, the second light-emitting device obtained has an advantage inthat the degradation and discoloration of the wiring board or the leadframe is suppressed. Still further, the second light-emitting device ofthe present invention has advantages in that light output therefrom hasless decrease with time even if the device is driven for a long time,and that the device has long lifetime.

A light-emitting device of the present invention is a light-emittingdevice (third light-emitting device) containing a conductive material,the conductive material being obtained by heating a conductive pastecontaining silver particles having an average particle diameter (mediandiameter) of 0.1 μm to 15 μm and alcohol at 150° C. to 300° C., whereinthe conductive material is used as a bonding material for bonding alight-emitting element to a wiring board or a lead frame. Using theforegoing conductive material, the third light-emitting device obtainedhas an advantage in that it has a sufficiently small electricresistance, and less variation in the electric resistance with time.Further, using the foregoing conductive material, the thirdlight-emitting device obtained has an advantage in that the degradationand discoloration of the wiring board or the lead frame is suppressed.Still further, the third light-emitting device of the present inventionhas advantages in that light output therefrom has less decrease withtime even if the device is driven for a long time, and that the devicehas long lifetime.

In the present invention, the wiring board is not limited particularlyas long as a conductive material composition or a conductive paste canbe applied over a surface of the wiring board. Examples of the wiringboard include a semiconductor element; a ceramic substrate containingaluminum oxide, aluminum nitride, zirconium oxide, zirconium nitride,titanium oxide, titanium nitride, or a mixture of the same; a metalsubstrate containing Cu, Fe, Ni, Cr, Al, Ag, Au, Ti, or an alloy of thesame; a glass epoxy substrate; a BT resin substrate; a glass substrate;a resin substrate; and paper. Using such a wiring substrate, the first,second, or third light-emitting device of the present invention hasexcellent heat resistance. Besides, according to the producing method ofthe present invention, a temperature for heating may be low. Therefore,a wiring board vulnerable to heat, such as that made of a thermoplasticresin, can be used.

Preferable as the wiring board is a ceramic substrate containingaluminum oxide, aluminum nitride, zirconium oxide, zirconium nitride,titanium oxide, titanium nitride, or a mixture of the same. In the casewhere the wiring substrate is a ceramic substrate, when a light-emittingelement is made of a single crystal having a small coefficient of linearexpansion, it is possible to prevent thermal stress from being appliedto bonded portions at which the substrate and the light-emitting elementare bonded. Further preferable as the wiring board is a ceramicsubstrate containing aluminum oxide. This is because in the case wherethe wiring board is a ceramic substrate containing aluminum oxide, thecosts of the light-emitting device can be reduced.

In the present invention, used as the lead frame is, for example, ametal frame made of copper, iron, nickel, chromium, aluminum, silver,gold, titanium, or an alloy of the same. Among these metals, copper,iron, or an alloy of the same is preferable. As the lead frame, thatmade of a copper alloy is preferable in a light-emitting device thatrequires heat dissipation, and an iron alloy is preferable in alight-emitting device that requires reliability of bonding with asemiconductor element.

In the present invention, a surface of a portion of the wiring board orthe lead frame on which the bonding material is to be applied may becoated with silver, an oxide of silver, a silver alloy, an oxide of asilver alloy, Pt, a Pt alloy, Sn, a Sn alloy, gold, a gold alloy, Cu, aCu alloy, Rh, a Rh alloy, or the like, and preferably with an oxide ofsilver (silver oxide). The reason is as follows: since the surface partof the portion on which the bonding material is to be applied is madeprincipally of silver, the surface part of the portion on which thebonding material is to be applied, if coated with silver oxide, haveexcellent fusibility with the bonding material. The coating can becarried out by plating, vapor deposition, sputtering, spreading, or thelike.

In the present invention, a surface of the light-emitting element thatis to be fused with the bonding material may be coated with silver, asilver alloy, Pt, a Pt alloy, Sn, a Sn alloy, gold, a gold alloy,copper, a copper alloy, Rh, a Rh alloy, or the like, and preferably iscoated with silver. The reason is as follows: since the surface part ofthe portion on which the bonding material is to be applied is madeprincipally of silver, the surface part of the portion on which thebonding material is to be applied, if coated with silver, have excellentfusibility with the bonding material. The coating can be carried out byplating, vapor deposition, sputtering, spreading, or the like.

In the first, second, and third light-emitting devices of the presentinvention, the lead frame preferably includes a metal member containingCu, Fe, Ni, Co, Cr, Al, Ag, Au, Ti, or an alloy of the same, and morepreferably includes a metal member containing Cu, Fe, Ni, Co, or analloy of the same. The wiring board or the lead frame preferably iscoated further with Ag, Au, Pt, Sn, Cu, Rh, or an alloy of the same, andmore preferably with Ag, Au, Pt, or an alloy of the same.

Further, the present invention is a method for producing the firstlight-emitting device according to the present invention, and the methodincludes the steps of applying a first conductive material compositionthat contains silver particles having an average particle diameter(median diameter) of 0.1 μm to 15 μm, and a metal oxide, over the wiringboard or the lead frame; placing the light-emitting element on the firstconductive material composition, so as to obtain a light-emitting deviceprecursor; and sintering the light-emitting device precursor, so as toobtain a light-emitting device. With the method for producing the firstlight-emitting device, an organic material in the board or the leadframe can be prevented from degrading or discoloring, and alight-emitting device with high quality and high volume productioncapability can be produced easily. In the method for producing the firstlight-emitting device, the first conductive material compositionpreferably further contains either an organic solvent having a boilingpoint of 300° C. or lower, or water. The organic solvent preferablycontains either a lower alcohol, or a lower alcohol having one or moresubstituents selected from the group consisting of lower alkoxy, amino,and halogen. The reason is as follows: if the first conductive materialcomposition further contains the organic solvent or water, the silverparticles can be contained in the organic solvent or water at a highconcentration, without the workability being impaired, and therefore,the material has smaller shrinkage in volume after sintered.Consequently, it is easy to estimate dimensions of the conductivematerial to be obtained. Still further, since the conductive materialobtained has smaller shrinkage in volume, closer adhesion thereof withthe wiring board or the lead frame can be provided.

Further, the present invention is a method for producing the secondlight-emitting device, and the method includes the steps of applying asecond conductive material composition that contains silver particleshaving an average particle diameter (median diameter) of 0.1 μm to 15 μmover the wiring board or the lead frame; placing the light-emittingelement on the second conductive material composition, so as to obtain alight-emitting device precursor; and sintering the light-emitting deviceprecursor in atmosphere of oxygen or ozone, or ambient atmosphere, at150° C. to 320° C., so as to obtain a light-emitting device. With themethod for producing the second light-emitting device, an organicmaterial in the board or the lead frame can be prevented from degradingor discoloring, whereby a light-emitting device with high quality andhigh volume production capability can be produced easily. Further, withthe method for producing the second light-emitting device, metals can bebonded at a relatively low temperature of 150° C. to 320° C., and thebonded portion has a re-melting temperature equivalent to the meltingpoint of silver of 962° C. Therefore, there is an advantage in that thereliability is not impaired even when the bonded portion is exposed to atemperature of 250° C. to 300° C. at which the light-emitting element tobe obtained is mounted on a substrate. In the method for producing thesecond light-emitting device, the second conductive material compositionmay further contain either an organic solvent having a boiling point of300° C. or lower, or water. The organic solvent may contain either alower alcohol, or a lower alcohol having one or more substituentsselected from the group consisting of lower alkoxy, amino, and halogen.In the case where the second conductive material composition furthercontains the organic solvent or water, the silver particles can becontained in the organic solvent or water at a high concentration,without the workability being impaired, the material has smallershrinkage in volume after sintered. Therefore, there is an advantagethat it is easy to estimate dimensions of the conductive material to beobtained. Further, since the shrinkage in volume of the conductivematerial obtained is small, there is an advantage that closer adhesionthereof with the wiring board or the lead frame can be provided.

Further, the present invention is a method for producing the thirdlight-emitting device, and the method includes the steps of applying aconductive paste that contains silver particles having an averageparticle diameter (median diameter) of 0.1 μm to 15 μm and alcohol overthe wiring board or the lead frame; placing the light-emitting elementon the conductive paste, so as to obtain a light-emitting deviceprecursor; and sintering the light-emitting device precursor at 150° C.to 300° C., so as to obtain a light-emitting device. With the method forproducing the third light-emitting device, an organic material in theboard or the lead frame can be prevented from degrading or discoloring,and a light-emitting device with high quality and high volume productioncapability can be produced easily. Further, with the method forproducing the third light-emitting device, metals can be bonded at arelatively low temperature of 150° C. to 300° C., and the bonded portionhas a re-melting temperature equivalent to the melting point of silverof 962° C. Therefore, there is an advantage in that the reliability isnot impaired even when the bonded portion is exposed to a temperature of250° C. to 300° C. at which the light-emitting element to be obtained ismounted on a substrate. In the case where the conductive paste furthercontains alcohol, the silver particles can be contained in the alcoholat a high concentration, without the workability being impaired, thematerial has smaller shrinkage in volume after sintered. Therefore,there is an advantage that it is easy to estimate dimensions of theconductive material to be obtained. Further, since the shrinkage involume of the conductive material obtained is small, there is anadvantage that closer adhesion thereof with the wiring board or the leadframe can be provided.

In the method for producing the third light-emitting device, thesintering step may be carried out in non-oxidizing atmosphere, ambientatmosphere, vacuum atmosphere, oxygen atmosphere, mixture gasatmosphere, or airflow. The sintering step preferably is carried out inambient atmosphere, since this makes the formation economical.

In the method for producing the first light-emitting device and themethod for producing the second light-emitting device, the step forapplying a conductive material composition over a substrate is notlimited particularly as long as the conductive material composition canbe applied over a surface of a substrate, but the step may be carriedout by printing, coating, or the like. Examples of the printing includescreen printing, offset printing, ink jet printing, flexographicprinting, dispenser printing, gravure printing, stamping, dispensing,squeeze printing, silk screen printing, spraying, and brush coating.Among these, screen printing, stamping, or dispensing is preferable. Theconductive material composition thus applied has a thickness of, forexample, 3 μm to 100 μm, preferably 3 μm to 50 μm, and more preferably 5μm to 20 μm. For a light-emitting device having a size of 0.5 mm squareor smaller, stamping or dispensing is preferable, between which stampingis more preferable. The stamping makes it possible to apply thecomposition accurately to fine regions, and furthermore, to increase theworking speed.

In the method for producing the third light-emitting device, the stepfor applying a conductive paste over a substrate is not limitedparticularly as long as the conductive paste can be applied over asurface of a substrate, but the step may be carried out by printing,coating, or the like. Examples of the printing include screen printing,offset printing, ink jet printing, flexographic printing, dispenserprinting, gravure printing, stamping, dispensing, squeeze printing, silkscreen printing, spraying, and brush coating. Among these, screenprinting, stamping, or dispensing is preferable. The conductive pastethus applied has a thickness of, for example, 3 μm to 100 μm, preferably3 μm to 50 μm, and more preferably 5 μm to 20 μm. For a light-emittingdevice having a size of 0.5 mm square or smaller, stamping or dispensingis preferable, between which stamping is more preferable. The stampingmakes it possible to apply the paste accurately to fine regions, andfurthermore, to increase the working speed.

Each of the method for producing the first light-emitting device, themethod for producing the second light-emitting device, and the methodfor producing the third light-emitting device may further include thestep of laying metal wiring between electrodes of the light-emittingelement and a wiring portion of the wiring board or the lead frame.Here, the metal wiring preferably is made of gold, silver, copper, oraluminum, and more preferably, gold. In the case where the metal wiringis made of gold, a stable bonding property is achieved, and corrosionless likely occurs.

Further, each of the method for producing the first light-emittingdevice, the method for producing the second light-emitting device, andthe method for producing the third light-emitting device may furtherinclude the step of sealing the light-emitting device with a resin, anair-tight cover, or a non-air-tight cover. Examples of the resin used inthe sealing step include epoxy resins, phenol resins, acrylic resins,polyimide resins, silicone resins, urethane resins, and thermoplasticresins. Among these, silicone resins are preferable, since alight-emitting device having excellent heat resistance and lightresistance as well as long lifetime can be produced. As a material forthe air-tight cover or the non-air-tight cover, the following can beused: inorganic glass; polyacrylic resin; polycarbonate resin;polyolefin resin; and norbornene resin. Among these, inorganic glass ispreferable, since a light-emitting device having excellent heatresistance and light resistance as well as long lifetime can beproduced.

A light-emitting device, obtained by the method for producing alight-emitting device according to the present invention, is configuredso that the conductive material is disposed between the wiring substrateor the lead frame, and the light-emitting element. The conductivematerial has a thickness of, for example, 2 μm to 80 μm, preferably 2 μmto 40 μm, and more preferably 3 μm to 15 μm.

The method for producing a light-emitting device according to thepresent invention preferably further includes the step of applying anadhesive over the conductive material. With the step of applying theadhesive, the adhesion between the wiring board and the conductivematerial can be improved. A conductive material made of the conventionalconductive composition containing an adhesive had a problem in thatmetal particles were insufficiently dense and an electric resistance washigh. In contrast, with the method of the present invention, metalparticles are sufficiently dense, and consequently, a conductivematerial having a low electric resistance can be obtained. In the casewhere such a method of the present invention further includes the stepof applying an adhesive over the conductive material, it is possible tocause the conductive material to firmly adhere to the wiring board. As aresult, a conductive material having a low electric resistance and highadhesion to the wiring board can be obtained, which is preferable.

Examples of the adhesive usable in the foregoing method include epoxyadhesives, phenol adhesives, acrylic adhesives, polyimide adhesives,silicone adhesives, urethane adhesives, and thermoplastic adhesives.Among these, epoxy adhesives are preferable as the foregoing adhesive.

Hereinafter, the average particle diameter (median diameter) is a valuedetermined by the laser method, and the specific surface is a valuedetermined by the BET method.

Example 1

Exothermic behaviors of mixture particles were checked by differentialscanning calorimetry (DSC) in Examples 1 to 5 and Comparative Examples 1to 5.

Specifically, 5 mg of mixture particles were sampled, and exothermicbehaviors of the same were checked by differential scanning calorimetry(DSC). In the DSC measurement, the temperature was increased by 10° C.per minute, from room temperature to 250° C. At 250° C., the mixtureparticles were placed in an anodized aluminum container, and a lid wasfitted thereafter. The atmosphere for the measurement was ambientatmosphere or nitrogen atmosphere. In the case where the nitrogenatmosphere was used for the measurement, the fitting of the lid wascarried out in a glove box filled with nitrogen. It should be noted thatalumina particles were used as a reference material. The compositionaldetails of mixture particles, the atmosphere used for the measurement,the temperature at which heat generation starts, the amount of heatgenerated, and the state of fusion (fused/not fused) after measurementare shown in Table 1. In Table 1, “Silver” refers to silver particleshaving an average particle diameter of 2.0 μm to 3.2 μm (produced byFukuda Metal Foil & Powder Co., Ltd., product name: “AgC-239”), “Silver(I) oxide” refers to silver (I) oxide (Ag₂O) particles having an averageparticle diameter of 18.5 μm (produced by Wako Pure Chemical Industries,Ltd., product name: “Silver (I) Oxide”), and “Silver (II) oxide” refersto silver (II) oxide (AgO) particles having an average particle diameterof 10.6 μm (produced by Wako Pure Chemical Industries, Ltd., productname: “Silver (II) Oxide”).

Further, the silver particles used are as follows:

Silver particles produced by Fukuda Metal Foil & Powder Co., Ltd.,having a product name of “AgC-239”, have an average particle diameter(median diameter) of 2.0 μm to 3.2 μm, and a specific surface of 0.6 to0.9 m²/g.

Silver particles produced by Mitsui Mining & Smelting Co., Ltd., havinga product name of “FHD”, have an average particle diameter (mediandiameter) of 0.3 μm, and a specific surface of 2.54 m²/g.

Silver particles produced by Mitsui Mining & Smelting Co., Ltd., havinga product name of “EHD”, have an average particle diameter (mediandiameter) of 0.5 μm, and a specific surface of 1.70 m²/g.

Silver particles produced by Wako Pure Chemical Industries, Ltd., havinga product name of “Silver (I) Oxide”, have an average particle diameter(median diameter) of 18.5 μm.

Silver particles produced by Wako Pure Chemical Industries, Ltd., havinga product name of “Silver (II) Oxide”, have an average particle diameter(median diameter) of 10.6 μm.

TABLE 1 Compositional details of particles Temperature Amount Silver ofheat of Ex./ Silver (I) (II) Atmosphere generation generated State Comp.Silver Oxide Oxide used for start heat of Ex. (wt %) (wt %) (wt %)measurement (° C.) (mJ/mg) fusion Ex. 1 100 0 0 Ambient 138 2.85 Fusedatmosphere Comp. 100 0 0 Nitrogen 130 0.81 Not Ex. 1 Atmosphere fusedComp. 0 100 0 Ambient 98 6.18 Not Ex. 2 atmosphere fused Comp. 0 100 0Nitrogen 127 1.69 Not Ex. 3 Atmosphere fused Ex. 2 90 10 0 Ambient 10897 Fused atmosphere Ex. 3 90 10 0 Nitrogen 107 92.5 Fused AtmosphereComp. 0 0 100 Ambient 147 21.8 Not Ex. 4 atmosphere fused Comp. 0 0 100Nitrogen 136 25.4 Not Ex. 5 Atmosphere fused Ex. 4 90 0 10 Ambient 10363.3 Fused atmosphere Ex. 5 90 0 10 Nitrogen 111 75.6 Fused Atmosphere

As shown in Table 1, the results of Example 1 and Comparative Example 1proved that when the second conductive material composition containingsilver particles having an average particle diameter (median diameter)of 0.1 μm to 15 μm was heated in ambient atmosphere, the particles werefused. Besides, the result that an amount of generated heat in Example 1was very small proved that any problem due to intense heat generationdid not occur.

As shown in Table 1, the results of Comparative Examples 2 to 5 provedthat when either only silver (I) oxide particles or only silver (II)oxide particles were heated in nitrogen atmosphere or ambientatmosphere, the particles were not fused.

As shown in Table 1, the results of Examples 2 to 5 proved that in thecase of mixture particles containing silver particles and silver (I)oxide particles, and in the case of mixture particles containing silverparticles and silver (II) oxide particles, an amount of generated heatwas relatively large. This amount of generated heat was several tens oftimes greater, in weight terms, than an amount of generated heat whenparticles of silver oxide of either type alone were heated. This factproved that the silver particles and the silver oxide particles reactedat portions where they were in contact with one another. Further, it wasproved that even in nitrogen atmosphere containing no oxygen, fusionoccurred when mixture particles containing silver particles and silveroxide particles were heated. In other words, it can be presumed thatsilver oxide particles reacted with silver particles, thereby becoming asource of oxygen.

Reference Example 1

Silver particles having an average particle diameter of 10 μm (producedby Fukuda Metal Foil & Powder Co., Ltd., product name: “AgC-224”, 2.5g), and 2-ethyl-1,3-hexanediol (0.3 g) were mixed at 25° C., whereby aconductive paste was obtained. The conductive paste thus obtained wasapplied over a glass substrate (thickness: 1 mm) by screen printing, soas to have a thickness of 200 μm. The glass substrate over which theconductive paste was applied was heated in nitrogen atmosphere at 150°C. The obtained wiring had a thickness of 160 μm to 190 μm, and anelectric resistance of 9.9×10⁻⁶ Ω·cm.

Reference Example 2

An experiment was carried out in the same manner as that in ReferenceExample 1 except that the heating temperature was set at 300° C.,instead of 150° C. The obtained wiring had an electric resistance of4.2×10⁻⁶ Ω·cm.

Example 6

Silver particles (produced by Fukuda Metal Foil & Powder Co., Ltd.,product name: “AgC-224”, 1.75 g), and silver (II) oxide particles havingan average particle diameter of 10 μm (produced by Wako Pure ChemicalIndustries, Ltd., product name: “Silver (II) Oxide”, 1.25 g) were mixedat 25° C., whereby a first conductive material composition was obtained.The first conductive material composition thus obtained was applied overa glass substrate (thickness: 1 mm) by screen printing, so as to have athickness of 200 μm. The glass substrate over which the first conductivematerial composition was applied was heated in nitrogen atmosphere of150° C. The obtained wiring had a thickness of 160 μm to 190 μm, and anelectric resistance of 4.9×10⁻⁵ Ω·cm.

Example 7

An experiment was carried out in the same manner as that in Example 6except that, as atmosphere used for heating, ambient atmosphere was usedin place of nitrogen atmosphere. The obtained wiring had an electricresistance of 4.4×10⁻⁵ Ω·cm.

Example 8

An experiment was carried out in the same manner as that in Example 6except that the heating temperature was set at 300° C., instead of 150°C. The obtained wiring had an electric resistance of 1.3×10⁻⁵ Ω·cm.

Example 9

An experiment was carried out in the same manner as that in Example 7except that the heating temperature was set at 300° C., instead of 150°C. The obtained wiring had an electric resistance of 1.2×10⁻⁵ Ω·cm.

Example 10

An experiment was carried out in the same manner as that in Example 6except that silver (II) oxide particles having an average particlediameter of 0.3 μm (1.25 g) were used in place of the silver (II) oxideparticles having an average particle diameter of 10 μm. The obtainedwiring had an electric resistance of 3.9×10⁻⁵ Ω·cm.

Example 11

An experiment was carried out in the same manner as that in Example 10except that, as atmosphere used for heating, ambient atmosphere was usedin place of nitrogen atmosphere. The obtained wiring had an electricresistance of 4.8×10⁻⁵ Ω·cm.

Example 12

An experiment was carried out in the same manner as that in Example 10except that the heating temperature was set at 300° C., instead of 150°C. The obtained wiring had an electric resistance of 2.2×10⁻⁵ Ω·cm.

Example 13

An experiment was carried out in the same manner as that in Example 11except that the heating temperature was set at 300° C., instead of 150°C. The obtained wiring had an electric resistance of 3.3×10⁻⁵ Ω·cm.

Reference Example 3

An experiment was carried out in the same manner as that in ReferenceExample 1 except that silver particles having an average particlediameter of 0.3 μm (produced by Mitsui Mining & Smelting Co., Ltd.,product name: “FHD”, 2.5 g) were used in place of the silver particleshaving an average particle diameter of 10 μm. The obtained wiring had anelectric resistance of 1.1×10⁻⁵ Ω·cm.

Reference Example 4

An experiment was carried out in the same manner as that in ReferenceExample 2 except that silver particles having an average particlediameter of 0.3 μm (produced by Mitsui Mining & Smelting Co., Ltd.,product name: “FHD”, 2.5 g) were used in place of the silver particleshaving an average particle diameter of 10 μm. The obtained wiring had anelectric resistance of 5.2×10⁻⁵ Ω·cm.

Example 14

An experiment was carried out in the same manner as that in Example 6except that silver particles having an average particle diameter of 0.3μm (1.75 g) were used in place of the silver particles having an averageparticle diameter of 10 μm. The obtained wiring had an electricresistance of 4.3×10⁻⁵ Ω·cm.

Example 15

An experiment was carried out in the same manner as that in Example 14except that, as atmosphere used for heating, ambient atmosphere was usedin place of nitrogen atmosphere. The obtained wiring had an electricresistance of 4.9×10⁻⁵ Ω·cm.

Example 16

An experiment was carried out in the same manner as that in Example 14except that the heating temperature was set at 300° C., instead of 150°C. The obtained wiring had an electric resistance of 1.2×10⁻⁵ Ω·cm.

Example 17

An experiment was carried out in the same manner as that in Example 18except that the heating temperature was set at 300° C., instead of 150°C. The obtained wiring had an electric resistance of 1.2×10⁻⁵ Ω·cm.

Example 18

An experiment was carried out in the same manner as that in Example 10except that silver (II) oxide particles having an average particlediameter of 0.3 μm (1.75 g) were used in place of the silver (II) oxideparticles having an average particle diameter of 10 μm. The obtainedwiring had an electric resistance of 4.7×10⁻⁵ Ω·cm.

Example 19

An experiment was carried out in the same manner as that in Example 14except that, as atmosphere used for heating, ambient atmosphere was usedin place of nitrogen atmosphere. The obtained wiring had an electricresistance of 3.9×10⁻⁵ Ω·cm.

Example 20

An experiment was carried out in the same manner as that in Example 18except that the heating temperature was set at 300° C., instead of 150°C. The obtained wiring had an electric resistance of 2.2×10⁻⁵ Ω·cm.

Example 21

An experiment was carried out in the same manner as that in Example 19except that the heating temperature was set at 300° C., instead of 150°C. The obtained wiring had an electric resistance of 1.5×10⁻⁵ Ω·cm.

The silver particles used in Reference Examples 1 to 4 and Examples 6 to21 are as follows:

Silver particles produced by Fukuda Metal Foil & Powder Co., Ltd.,having a product name of “AgC-224”, have an average particle diameter(median diameter) of 6.5 μm to 9.0 μm, and a specific surface of 0.25m²/g to 0.40 m²/g.

Silver particles produced by Mitsui Mining & Smelting Co., Ltd., havinga product name of “FHD”, have an average particle diameter (mediandiameter) of 0.3 μm, and a specific surface of 2.54 m²/g.

Silver particles produced by Wako Pure Chemical Industries, Ltd., havinga product name of “Silver (II) Oxide”, have an average particle diameter(median diameter) of 10.6 μm.

Silver (II) oxide particles having an average particle diameter of 0.3μm were produced in-house in the following manner. Each of silvernitrate and ammonium persulfate was dissolved in pure water, andsolutions obtained were mixed and stirred; then, particles precipitatedwere settled out, separated, and washed with water.

Table 2 shows the compositional details of conductive pastes inReference Examples 1 to 4 and the compositional details of conductivematerial compositions in examples 6 to 21, as well as, as to each of theconductive pastes and the conductive material compositions, the heatingtemperature, the atmosphere used for heating, and a resistance of aconductive material obtained after heating. In Table 2, “Silver 10 μm”refers to silver particles having an average particle diameter of 6.5 μmto 9.0 μm (produced by Fukuda Metal Foil & Powder Co., Ltd., productname: AgC-224), “Silver 0.3 μm” refers to silver particles having anaverage particle diameter of 0.3 μm (produced by Mitsui Mining &Smelting Co., Ltd., product name: “FHD”), “Silver (II) oxide 10” refersto silver (II) oxide (AgO) particles having an average particle diameterof 10.6 μm (produced by Wako Pure Chemical Industries, Ltd., productname: “Silver (II) oxide”), and “Silver (II) oxide 0.3 μm” refers tosilver (II) oxide (AgO) particles having an average particle diameter of0.3 μm (produced in-house).

TABLE 2 Compositional details of particles Silver (II) Silver (II)Silver Silver oxide oxide Heating Atmosphere 10 μm 0.3 μm 10 μm 0.3 μmtemp. used for Resistance Example (wt %) (wt %) (wt %) (wt %) (° C.)heating (Ω · cm) Ref. Ex. 1 100 0 0 0 150 Ambient 9.9 × 10⁻⁶ atm. Ref.Ex. 2 100 0 0 0 300 Ambient 4.2 × 10⁻⁶ atm. Ex. 6 70 0 30 0 150 Nitrogen4.9 × 10⁻⁵ atm. Ex. 7 70 0 30 0 150 Ambient 4.4 × 10⁻⁵ atm. Ex. 8 70 030 0 300 Nitrogen 1.3 × 10⁻⁵ atm. Ex. 9 70 0 30 0 300 Ambient 1.2 × 10⁻⁵atm. Ex. 10 70 0 0 30 150 Nitrogen 3.9 × 10⁻⁵ atm. Ex. 11 70 0 0 30 150Ambient 4.8 × 10⁻⁵ atm. Ex. 12 70 0 0 30 300 Nitrogen 2.2 × 10⁻⁵ atm.Ex. 13 70 0 0 30 300 Ambient 3.3 × 10⁻⁵ atm. Ref. Ex. 3 0 100 0 0 150Ambient 1.1 × 10⁻⁵ atm. Ref. Ex. 4 0 100 0 0 300 Ambient 5.2 × 10⁻⁵ atm.Ex. 14 0 70 30 0 150 Nitrogen 4.3 × 10⁻⁵ atm. Ex. 15 0 70 30 0 150Ambient 4.9 × 10⁻⁵ atm. Ex. 16 0 70 30 0 300 Nitrogen 1.2 × 10⁻⁵ atm.Ex. 17 0 70 30 0 300 Ambient 1.2 × 10⁻⁵ atm. Ex. 18 0 70 0 30 150Nitrogen 4.7 × 10⁻⁵ atm. Ex. 19 0 70 0 30 150 Ambient 3.9 × 10⁻⁵ atm.Ex. 20 0 70 0 30 300 Nitrogen 2.2 × 10⁻⁵ atm. Ex. 21 0 70 0 30 300Ambient 1.5 × 10⁻⁵ atm.

The results of Reference Examples 1 and 2 and Examples 6 to 9 shown inTable 2 proved that when a conductive paste or a conductive materialcomposition was heated, a higher concentration of oxygen allowed aconductive material with a lower electric resistance to be obtained.Further, the results also show that the heating temperature of 300° C.allowed a conductive material with a lower electric resistance to beobtained, as compared with the heating temperature of 150° C.

As shown in Table 2, the results of Reference Examples 1 to 4 andExamples 6 to 21 proved that every conductive material that was obtainedby heating the conductive paste or the conductive material compositionhad an electric resistance of 5.0×10⁻⁵ Ω·cm or less. Since such aconductive composition did not contain a resin component, a bondingmaterial with high reliability was obtained.

Example 22

A dam was formed with a mask on a glass substrate (thickness: 1 mm), andthe second conductive material composition containing silver particleshaving an average particle diameter of 10 μm (produced by Fukuda MetalFoil & Powder Co., Ltd., product name: “AgC-224”, 2.5 g) was filledunder pressure into the dam in such a manner that the composition had athickness of 200 μm and the silver particles were not be plasticallydeformed. The glass substrate, on which the silver particles were thusplaced, was heated at 200° C. in ambient atmosphere. The wiring obtainedhad a voidage of 8.2%, and an electric resistance of 3.7×10⁻⁶ Ω·cm.

Reference Example 5

Silver particles having an average particle diameter of 10 μm (FukudaMetal Foil & Powder Co., Ltd., product name: “AgC-224”, 2.5 g) and2-ethyl-1,3-hexanediol (0.28 g) were mixed at 25° C., whereby aconductive paste was obtained. The content of 2-ethyl-1,3-hexanediol inthe paste was 10 wt %. The conductive paste obtained was applied over aglass substrate (thickness: 1 mm) by screen printing, so as to have athickness of 200 μm. The glass substrate, over which the conductivepaste was applied, was heated at 200° C. in ambient atmosphere. Thewiring obtained had a voidage of 21.3%, and an electric resistance of8.3×10⁻⁶ Ω·cm.

Reference Example 6

An experiment was carried out in the same manner as that in ReferenceExample 5 except that the weight of 2-ethyl-1,3-hexanediol was set at,not 0.28 g, but 0.44 g, and the content thereof in the paste was set at15 wt %. The wiring obtained had a voidage of 27.5%, and an electricresistance of 1.2×10⁻⁵ Ω·cm.

Reference Example 7

An experiment was carried out in the same manner as that in ReferenceExample 5 except that the weight of 2-ethyl-1,3-hexanediol was set at,not 0.28 g, but 0.63 g, and the content thereof in the paste was set at20 wt %. The wiring obtained had a voidage of 35.1%, and an electricresistance of 7.2×10⁻⁵ Ω·cm.

Reference Example 8

An experiment was carried out in the same manner as that in ReferenceExample 5 except that the weight of 2-ethyl-1,3-hexanediol was set at,not 0.28 g, but 0.84 g, and the content thereof in the paste was set at30 wt %. The wiring obtained had a voidage of 42.9%, and an electricresistance of 3.1×10⁻⁴ Ω·cm.

Table 3 shows the compositional details of the conductive materialcomposition of Example 22, and the added amount of a solvent, thevoidage and resistance of a conductive material obtained by heating theconductive paste or the conductive material composition as to each ofReference Examples 5 to 8 An electron micrograph of the conductivematerial obtained in Example 22 is shown in FIG. 1. An electronmicrograph of the conductive material obtained in Reference Example 8 isshown in FIG. 2.

TABLE 3 Added amount of solvent Voidage Resistance Example (wt %) (% byarea) (Ω · cm) Ex. 22 0 8.2 3.7 × 10⁻⁶ Ω · cm Ref. Ex. 5 10 21.3 8.3 ×10⁻⁶ Ω · cm Ref. Ex. 6 15 27.5 1.2 × 10⁻⁵ Ω · cm Ref. Ex. 7 20 35.1 7.2× 10⁻⁵ Ω · cm Ref. Ex. 8 30 42.9 3.1 × 10⁻⁴ Ω · cm

As shown in Table 3, the results of Example 22 and Reference Examples 5to 8 proved that the voidage was influenced most by the amount ofsolvent in the conductive paste. Further, as shown in FIG. 1, it wasproved that when no solvent was used and silver particles were filledunder pressure, voids decreased, since no volume portion was occupied bya solvent and no path for allowing volatile solvent to pass through wasneeded. As shown in FIG. 2, it was proved that when a large amount ofsolvent was used, the voidage increased, since certain volume portionswere occupied by the solvent and paths for discharge of vaporizedsolvent were needed.

Comparative Example 6

Silver particles (produced by Fukuda Metal Foil & Powder Co., Ltd.,product name: “AgC-239”, 2.5 g), and 2-ethyl-1,3-hexanediol (0.3 g) weremixed at 25° C., whereby a composition was obtained. The compositionobtained was applied on a silver-plated surface of an alumina substrateby stamping, and a sapphire dice having one surface metallized withsilver, in a size of 500 μm×500 μm×100 μm (thickness), was mountedthereon. This was heated at 200° C. in nitrogen atmosphere. A shearingpower was applied in such a direction that the dice was separated fromthe alumina substrate, and a strength when the dice separated therefromwas measured. The strength was 52 gf.

Example 23

Silver particles (produced by Fukuda Metal Foil & Powder Co., Ltd.,product name: “AgC-239”, 2.375 g), silver (II) oxide (produced by WakoPure Chemical Industries, Ltd., product name: “Silver (II) Oxide”, 0.125g), and 2-ethyl-1,3-hexanediol (0.3 g) were mixed at 25° C., whereby afirst conductive material composition was obtained. The compositionobtained was applied on a silver-plated surface of an alumina substrateby stamping, and a sapphire dice having one surface metallized withsilver, in a size of 500 μm×500 μm×100 μm (thickness), was mountedthereon. This was heated at 200° C. in nitrogen atmosphere. A shearingpower was applied in such a direction that the dice was separated fromthe alumina substrate, and a strength when the dice separated therefromwas measured. The strength was 392 gf.

Example 24

An experiment was carried out in the same manner as that in Example 23except that silver particles (produced by Fukuda Metal Foil & PowderCo., Ltd., product name: “AgC-239”, 2.25 g) and silver (II) oxide(produced by Wako Pure Chemical Industries, Ltd., product name: “Silver(II) Oxide”, 0.25 g) were used in place of the silver particles(produced by Fukuda Metal Foil & Powder Co., Ltd., product name:“AgC-239”, 2.375 g) and the silver (II) oxide (produced by Wako PureChemical Industries, Ltd., product name: “Silver (II) Oxide”, 0.125 g).The shear strength measured was 553 gf.

Example 25

An experiment was carried out in the same manner as that in Example 23except that silver particles (produced by Fukuda Metal Foil & PowderCo., Ltd., product name: “AgC-239”, 2.0 g) and silver (II) oxide(produced by Wako Pure Chemical Industries, Ltd., product name: “Silver(II) Oxide”, 0.5 g) were used in place of the silver particles (producedby Fukuda Metal Foil & Powder Co., Ltd., product name: “AgC-239”, 2.375g) and the silver (II) oxide (produced by Wako Pure Chemical Industries,Ltd., product name: “Silver (II) Oxide”, 0.125 g). The shear strengthmeasured was 478 gf.

Example 26

An experiment was carried out in the same manner as that in Example 23except that silver particles (produced by Fukuda Metal Foil & PowderCo., Ltd., product name: “AgC-239”, 1.75 g) and silver (II) oxide(produced by Wako Pure Chemical Industries, Ltd., product name: “Silver(II) Oxide”, 0.75 g) were used in place of the silver particles(produced by Fukuda Metal Foil & Powder Co., Ltd., product name:“AgC-239”, 2.375 g) and the silver (II) oxide (produced by Wako PureChemical Industries, Ltd., product name: “Silver (II) Oxide”, 0.125 g).The shear strength measured was 322 gf.

Example 27

An experiment was carried out in the same manner as that in Example 23except that silver particles (produced by Fukuda Metal Foil & PowderCo., Ltd., product name: “AgC-239”, 1.25 g) and silver (II) oxide(produced by Wako Pure Chemical Industries, Ltd., product name: “Silver(II) Oxide”, 1.25 g) were used in place of the silver particles(produced by Fukuda Metal Foil & Powder Co., Ltd., product name:“AgC-239”, 2.375 g) and the silver (II) oxide (produced by Wako PureChemical Industries, Ltd., product name: “Silver (II) Oxide”, 0.125 g).The shear strength measured was 157 gf.

Example 28

Silver particles (produced by Fukuda Metal Foil & Powder Co., Ltd.,product name: “AgC-239”, 2.5 g), and 2-ethyl-1,3-hexanediol (0.3 g) weremixed at 25° C., whereby a first conductive material composition wasobtained. The composition obtained was applied on a silver-platedsurface of an alumina substrate by stamping, and a sapphire dice havingone surface metallized with silver, in a size of 500 μm×500 μm×100 μm(thickness), was mounted thereon. This was heated at 200° C. inatmospheric nitrogen atmosphere. A shearing power was applied in such adirection that the dice was separated from the alumina substrate, and astrength when the dice separated therefrom was measured. The strengthwas 722 gf.

Example 29

An experiment was carried out in the same manner as that in Example 23except that, as atmosphere used for heating, ambient atmosphere was usedin place of nitrogen atmosphere. The shearing strength measured was 703gf.

Example 30

An experiment was carried out in the same manner as that in Example 24except that, as atmosphere used for heating, ambient atmosphere was usedin place of nitrogen atmosphere. The shearing strength measured was 664gf.

Example 31

An experiment was carried out in the same manner as that in Example 25except that, as atmosphere used for heating, ambient atmosphere was usedin place of nitrogen atmosphere. The shearing strength measured was 544gf.

Example 32

An experiment was carried out in the same manner as that in Example 26except that, as atmosphere used for heating, ambient atmosphere was usedin place of nitrogen atmosphere. The shearing strength measured was 391gf.

Example 33

An experiment was carried out in the same manner as that in Example 27except that, as atmosphere used for heating, ambient atmosphere was usedin place of nitrogen atmosphere. The shearing strength measured was 123gf.

As to each of Comparative Example 6 and Examples 23 to 33, Table 4 showsthe content of silver (II) oxide in a conductive material composition,the atmosphere used for heating, and the shearing strength of aconductive material obtained.

TABLE 4 Silver (II) oxide Atmosphere used Shearing strength Example (wt%) for heating (gf) Comp. Ex. 6 0 Nitrogen atm. 52 Ex. 23 5 Nitrogenatm. 392 Ex. 24 10 Nitrogen atm. 553 Ex. 25 20 Nitrogen atm. 478 Ex. 2630 Nitrogen atm. 322 Ex. 27 50 Nitrogen atm. 157 Ex. 28 0 Ambient atm.722 Ex. 29 5 Ambient atm. 703 Ex. 30 10 Ambient atm. 664 Ex. 31 20Ambient atm. 544 Ex. 32 30 Ambient atm. 391 Ex. 33 50 Ambient atm. 123

As shown in Table 4, the results of Comparative Example 6 and Examples23 to 27 proved that when a first conductive material compositioncontaining silver particles having an average particle diameter of 0.1μm to 15 μm and a metal oxide were heated, a conductive material havinga sufficient shear strength was obtained. Further, the results ofExamples 28 to 33 proved that when a first conductive materialcomposition containing silver particles having an average particlediameter of 0.1 μm to 15 μm was sintered in ambient atmosphere, aconductive material having a sufficient shear strength was obtained.

Example 34

Silver particles (produced by Fukuda Metal Foil & Powder Co., productname: “AgC-239”, 2.5 g) and 2-ethyl-1,3-hexanediol having a boilingpoint of 243° C. (0.44 g) were mixed at 25° C., whereby a secondconductive material composition was obtained. This composition wasapplied by stamping over an aluminum oxide substrate for alight-emitting device, with a pattern being formed on the substrate byAg/Ni plating. The area subjected to application was a perfect circle inshape, and had a diameter of about 700 μm in size. The application wascarried out continuously 312 times, and diameters of applied areasobtained at the first ten times immediately after the start, and thoseat the last ten times in chronological order, were measured. Then, itwas determined by Student's t-test whether there was a significantdifference therebetween. FIG. 3 shows a variation of the amount of thecomposition applied by stamping.

As shown in FIG. 3, the results of Example 34 proved that in the casewhere a second conductive material composition containing silverparticles having an average particle diameter of 0.1 μm to 10 μm andalcohol was applied by stamping, a confidence interval with 95%reliability with respect to the diameter average of the applied areasobtained at the first ten times immediately after the start, and that ofthe applied areas obtained at the last ten times, were substantiallyidentical, and no significant difference was seen therebetween. In otherwords, it was proved that the stamping can be carried out using aconductive material composition containing no adhesive. Further, it wasproved that since an organic solvent having a high boiling point wascontained, the deterioration of the stamping stability due tovolatilization of an organic solvent was avoided.

Example 35

A 500 μm—square light-emitting element was mounted on the surface onwhich the conductive material composition was applied by stamping inExample 34. Metal films were formed by vapor deposition on a surfacewhere the light-emitting element and the conductive material compositionwere in contact with each other, and the topmost film was made of silver(thickness: 0.2 μm). The substrate on which the light-emitting elementwas mounted with the conductive material composition being interposedtherebetween was heated at 200° C. for one hour in ambient atmosphere.Thereafter the substrate was cooled. The light-emitting elementexhibited a sufficient strength of bonding with the substrate. Further,the bonded portion at which the light-emitting element and the substratewere bonded was checked by visual observation, and the fusion ofparticles in the bonding material was observed. As to the substrate onwhich the light-emitting element was bonded, a die-shear strength wasmeasured at room temperature, and was determined to be about 0.7 kgf.

On the light-emitting element of the substrate, another aluminum oxidesubstrate for a light-emitting device was mounted, and was heatedfurther at 250° C. for two hours. Here, it was noted that the bondedportions of silver between the light-emitting element and the substratedid not have any discoloration. As to this bonding between thelight-emitting element and the substrate, a die-shear strength wasmeasured at room temperature, and was determined to be about 0.7 kgf.

Next, electrodes of the light-emitting element and electrodes of thesubstrate were connected with gold wiring, and were sealed with asilicone resin. In this state, power-on tests (test conditions: 25° C.,50 mA) were carried out after a lapse of 500 hours, after a lapse of1000 hours, and after a lapse of 2000 hours. The output results withrespect to the initial outputs are shown in Table 5. It should be notedthat after a lapse of 2000 hours, no discoloration occurred at thebonded portions of silver between the light-emitting element and thesubstrate.

Comparative Example 7

An insulative epoxy resin (curing conditions: 180° C., 2 hours) wasapplied by stamping over an aluminum oxide substrate for alight-emitting device, with a pattern being formed on the substrate byAg/Ni plating. The applied area was a perfect circle in shape, and had adiameter of about 700 μm in size. A light-emitting element was mountedon the foregoing adhesive. The substrate on which the light-emittingelement was thus mounted with the adhesive provided therebetween washeated at 200° C. for 1 hour in ambient atmosphere. Thereafter, thesubstrate was cooled. As to the substrate on which the light-emittingelement was bonded, a die-shear strength was measured at roomtemperature, and was determined to be about 1 kgf.

On the light-emitting element of the substrate, another aluminum oxidesubstrate for a light-emitting device was mounted, and was heatedfurther at 250° C. for two hours. Here, it was noted that the bondedportions of silver between the light-emitting element and the substratehad discoloration into blackish-brownish color. As to this bondingbetween the light-emitting element and the substrate, a die-shearstrength was measured at room temperature, and was determined to beabout 0.4 kgf.

Next, electrodes of the light-emitting element and electrodes of thesubstrate were connected with gold wiring, and were sealed with asilicone resin. In this state, power-on tests (test conditions: 25° C.,50 mA) were carried out after a lapse of 500 hours, after a lapse of1000 hours, and after a lapse of 2000 hours. The output results withrespect to the initial outputs are shown in Table 5. It should be notedthat after a lapse of 2000 hours, discoloration to blackish-brownishcolor occurred at the bonded portions of silver between thelight-emitting element and the substrate.

Comparative Example 8

A silver paste containing 80 wt % of a flake-form silver filler and 20wt % of an epoxy resin (curing conditions: 200° C., 1.5 hours) wasapplied by stamping over an aluminum oxide substrate for alight-emitting device, with a pattern being formed on the substrate byAg/Ni plating. The applied area was a perfect circle in shape, and had adiameter of about 700 μm in size. A light-emitting element was mountedon the foregoing adhesive. The substrate on which the light-emittingelement was thus mounted with the adhesive provided therebetween washeated at 200° C. for 1 hour in ambient atmosphere. Thereafter, thesubstrate was cooled. As to the substrate on which the light-emittingelement was bonded, a die-shear strength was measured at roomtemperature, and was determined to be about 0.7 kgf.

On the light-emitting element of the substrate, another aluminum oxidesubstrate for a light-emitting device was mounted, and was heatedfurther at 250° C. for two hours. Here, it was noted that the bondedportions of silver between the light-emitting element and the substratehad discoloration into blackish-brownish color. As to this bondingbetween the light-emitting element and the substrate, a die-shearstrength was measured at room temperature, and was determined to beabout 0.6 kgf.

Next, electrodes of the light-emitting element and electrodes of thesubstrate were connected with gold wiring, and were sealed with asilicone resin. In this state, power-on tests (test conditions: 25° C.,50 mA) were carried out after a lapse of 500 hours, after a lapse of1000 hours, and after a lapse of 2000 hours. The output results withrespect to the initial outputs are shown in Table 5. It should be notedafter a lapse of 2000 hours, discoloration to blackish-brownish coloroccurred at the bonded portions of silver between the light-emittingelement and the substrate.

TABLE 5 After After After lapse lapse lapse of 500 of 1000 of 2000Bonding hours hours hours Ex. 35 Bonding by Ag fusion 98% 98% 97% Comp.Ex. 7 Bonding with 95% 87% 73% insulative epoxy resin Comp. Ex. 8Bonding with epoxy 93% 82% 64% resin containing flake-form silver filler

Table 5 shows that in the case of the bonding obtained in Example 35,the output only slightly decreased even after a lapse of 2000 hours. Onthe other hand, it is shown that in the cases of the bonding obtained inComparative Example 7 and that in Comparative Example 8, the outputssignificantly decreased after a lapse of 2000 hours.

Example 36

To silver particles (produced by Fukuda Metal Foil & Powder Co., Ltd.,product name: “AgC-239”, 2.5 g), silver oxide having an average particlediameter of 0.5 μm to 1.0 μm (principal component: AgO) was added at aratio by weight of 10 wt %, and tripropylene glycol monomethyl ether wasadded thereto so that a ratio by weight of the same to a solid portionwas 85:15, and these were mixed at 25° C., whereby a first conductivematerial composition was prepared. At a position of a lead frame where alight-emitting element was mounted, which was obtained by insert moldingof a resin portion that would become a reflector, the conductivematerial composition was applied by stamping. It should be noted that asurface at the position of the lead frame where a light-emitting elementwas mounted was coated further with silver (thickness: 2 μm) by vapordeposition. On the conductive material composition thus coated withsilver, a light-emitting element having a size of 300 μm square wasdisposed. The lead frame on which the light-emitting element wasdisposed was heated at 180° C. for two hours in non-oxidizingatmosphere, taken out of the atmosphere, and cooled. The bonding betweenthe light-emitting element and the substrate provided a sufficientstrength. The bonded portion at which the light-emitting element and thesubstrate were bonded was checked by visual observation, and the fusionof particles in the bonding material was observed. Further, it was notedthat neither degradation nor discoloration occurred to the lead frameresin portion since the heating was performed in non-oxidizingatmosphere. As to the substrate on which the light-emitting element wasbonded, a die-shear strength was measured at room temperature, and wasdetermined to be about 0.3 kgf.

On the light-emitting element of the substrate, another aluminum oxidesubstrate for a light-emitting device was mounted, and was heatedfurther at 250° C. for two hours. Here, it was noted that the bondedportions of silver between the light-emitting element and the substratehad no discoloration. As to this bonding between the light-emittingelement and the substrate, a die-shear strength was measured at roomtemperature, and was determined to be about 0.3 kgf.

Next, electrodes of the light-emitting element and electrodes of thesubstrate were connected with gold wiring, and were sealed with asilicone resin. In this state, power-on tests (test conditions: 25° C.,50 mA) were carried out after a lapse of 500 hours, after a lapse of1000 hours, and after a lapse of 2000 hours. The output results withrespect to the initial outputs are shown in Table 6. It should be notedthat after a lapse of 2000 hours, no discoloration occurred at thebonded portions of silver between the light-emitting element and thesubstrate.

Comparative Example 9

An experiment was carried out in the same manner as that in Example 36except that an epoxy resin (curing conditions: 180° C., 2 hours) wasused in place of the first conductive material composition. As to asubstrate on which a light-emitting element was bonded, a die-shearstrength was measured at room temperature, and was determined to beabout 0.4 kgf.

On the light-emitting element of the substrate, another aluminum oxidesubstrate for a light-emitting device was mounted, and was heatedfurther at 250° C. for two hours. Here, it was noted that the bondedportions of silver between the light-emitting element and the substratehad discoloration into blackish-brownish color. As to this bondingbetween the light-emitting element and the substrate, a die-shearstrength was measured at room temperature, and was determined to beabout 0.1 kgf.

Next, electrodes of the light-emitting element and electrodes of thesubstrate were connected with gold wiring, and were sealed with asilicone resin. In this state, power-on tests (test conditions: 25° C.,50 mA) were carried out after a lapse of 500 hours, after a lapse of1000 hours, and after a lapse of 2000 hours. The output results withrespect to the initial outputs are shown in Table 6. It should be notedthat after a lapse of 2000 hours, discoloration to blackish-brownishcolor occurred at the bonded portions of silver between thelight-emitting element and the substrate.

Comparative Example 10

An experiment was carried out in the same manner as that in Example 36except that an Ag paste (curing conditions: 200° C., 1.5 hours)containing 80 wt % of a silver filler and 20 wt % of an epoxy resin wasused in place of the first conductive material composition. As to asubstrate on which a light-emitting element was bonded, a die-shearstrength was measured at room temperature, and was determined to beabout 0.3 kgf.

On the light-emitting element of the substrate, another aluminum oxidesubstrate for a light-emitting device was mounted, and was heatedfurther at 250° C. for two hours. Here, it was noted that the bondedportions of silver between the light-emitting element and the substratehad discoloration into blackish-brownish color. As to this bondingbetween the light-emitting element and the substrate, a die-shearstrength was measured at room temperature, and was determined to beabout 0.1 kgf.

Next, electrodes of the light-emitting element and electrodes of thesubstrate were connected with gold wiring, and were sealed with asilicone resin. In this state, power-on tests (test conditions: 25° C.,50 mA) were carried out after a lapse of 500 hours, after a lapse of1000 hours, and after a lapse of 2000 hours. The output results withrespect to the initial outputs are shown in Table 6. It should be notedafter a lapse of 2000 hours, discoloration to blackish-brownish coloroccurred at the bonded portions of silver between the light-emittingelement and the substrate.

TABLE 6 After After After lapse lapse lapse of 500 of 1000 of 2000Bonding hours hours hours Ex. 36 Bonding by Ag fusion 96% 95% 95% Comp.Ex. 9 Bonding with 90% 83% 70% insulative epoxy resin Comp. Ex. 10Bonding with epoxy 88% 79% 65% resin containing flake-form silver filler

As shown in Table 6, it is noted that in the case of the bondingobtained in Example 36, the output only slightly decreased even after alapse of 2000 hours. On the other hand, it was noted that in the casesof the bonding obtained in Comparative Example 9 and that in ComparativeExample 10, the outputs significantly decreased after a lapse of 2000hours.

INDUSTRIAL APPLICABILITY

The method for producing a conductive material according to presentinvention can be used for the purpose of producing heat-resistant powerwiring, component electrodes, die attaches, microbumps, flat panels,solar wiring, and the like, the purpose of wafer bonding, and thepurpose of producing electronic components produced with use of these incombination. The method for producing a conductive material according tothe present invention also can be used for, for example, producing alight-emitting device in which a light-emitting element such as LED orLD is used.

1. A method for producing a light-emitting device comprising alight-emitting element, a wiring board or a lead frame and a conductivematerial used as a bonding material for bonding the light-emittingelement to the wiring board or the lead frame, the method comprising thesteps of: applying a first conductive material composition that containssilver particles having an average particle diameter (median diameter)of 0.1 μm to 15 μm, and a metal oxide, over the wiring board or the leadframe; placing the light-emitting element on the first conductivematerial composition, so as to obtain a light-emitting device precursor;and sintering the light-emitting device precursor, so as to obtain thelight-emitting device.
 2. A method for producing a light-emitting devicecomprising a light-emitting element, a wiring board or a lead frame anda conductive material used as a bonding material for bonding thelight-emitting element to the wiring board or the lead frame, the methodcomprising the steps of: applying a second conductive materialcomposition that contains silver particles having an average particlediameter (median diameter) of 0.1 μm to 15 μm over the wiring board orthe lead frame; placing the light-emitting element on the secondconductive material composition, so as to obtain a light-emitting deviceprecursor; and sintering the light-emitting device precursor in anatmosphere of oxygen or ozone, or ambient atmosphere so as to obtain thelight-emitting device.
 3. The method for producing the light-emittingdevice according to claim 1, wherein the first conductive materialcomposition further contains either an organic solvent having a boilingpoint of 300° C. or lower, or water.
 4. The method for producing thelight-emitting device according to claim 3, wherein the organic solventcontains either a lower alcohol having one or more substituents selectedfrom the group consisting of methoxy, ethoxy, n-propoxy, i-propoxy,n-butoxy, i-butoxy, sec-butoxy, t-butoxy, n-pentyloxy, amino, andhalogen, or a lower alcohol other than the same.
 5. The method forproducing the light-emitting device according to claim 1, wherein thesintering step is carried out in an atmosphere of oxygen or ozone, orambient atmosphere.
 6. The method for producing the light-emittingdevice according to claim 1, wherein the sintering step is carried outat a temperature in a range of 150° C. to 320° C.
 7. The method forproducing the light-emitting device according to claim 1, wherein themetal oxide is one or more selected from the group consisting of AgO,Ag₂O, and Ag₂O₃.
 8. The method for producing the light-emitting deviceaccording to claim 1, wherein a content of the metal oxide in the firstconductive material composition is 5 wt % to 40 wt % with respect to thesilver particles.
 9. The method for producing the light-emitting deviceaccording to claim 1, wherein in the conductive material, the silverparticles are fused to one another, and a voidage is 5 vol % to 35 vol%.
 10. The method for producing the light-emitting device according toclaim 1, further comprising the step of: laying metal wiring betweenelectrodes of the light-emitting element and a wiring portion of thewiring board or the lead frame.
 11. The method for producing thelight-emitting device according to claim 1, further comprising the stepof: sealing the light-emitting device with a resin, an air-tight cover,or a non-air-tight cover.
 12. The method for producing thelight-emitting device according to claim 1, wherein the wiring boardincludes at least one selected from the group consisting of a ceramicsubstrate containing aluminum oxide, aluminum nitride, zirconium oxide,zirconium nitride, titanium oxide, titanium nitride, or a mixture of anyof these; a metal substrate containing Cu, Fe, Ni, Cr, Al, Ag, Au, Ti,or an alloy of any of these; a glass epoxy substrate; and a BT resinsubstrate.
 13. The method for producing the light-emitting deviceaccording to claim 1, wherein the lead frame includes a metal membercontaining Cu, Fe, Ni, Cr, Al, Ag, Au, Ti, or an alloy of any of these.14. The method for producing the light-emitting device according toclaim 1, wherein the wiring board or the lead frame is covered furtherwith Ag, Au, Pt, Sn, Cu, Rh, or an alloy of any of these.
 15. The methodfor producing the light-emitting device according to claim 2, whereinthe second conductive material composition further contains either anorganic solvent having a boiling point of 300° C. or lower, or water.16. The method for producing the light-emitting device according toclaim 15, wherein the organic solvent contains either a lower alcoholhaving one or more substituents selected from the group consisting ofmethoxy, ethoxy, n-propoxy, i-propoxy, n-butoxy, i-butoxy, sec-butoxy,t-butoxy, n-pentyloxy, amino, and halogen, or a lower alcohol other thanthe same.
 17. The method for producing the light-emitting deviceaccording to claim 2, wherein the sintering step is carried out at atemperature in a range of 150° C. to 320° C.
 18. The method forproducing the light-emitting device according to claim 2, wherein in theconductive material, the silver particles are fused to one another, anda voidage is 5 vol % to 35 vol %.
 19. The method for producing thelight-emitting device according to claim 2, further comprising the stepof: laying metal wiring between electrodes of the light-emitting elementand a wiring portion of the wiring board or the lead frame.
 20. Themethod for producing the light-emitting device according to claim 2,further comprising the step of: sealing the light-emitting device with aresin, an air-tight cover, or a non-air-tight cover.
 21. The method forproducing the light-emitting device according to claim 2, wherein thewiring board includes at least one selected from the group consisting ofa ceramic substrate containing aluminum oxide, aluminum nitride,zirconium oxide, zirconium nitride, titanium oxide, titanium nitride, ora mixture of any of these; a metal substrate containing Cu, Fe, Ni, Cr,Al, Ag, Au, Ti, or an alloy of any of these; a glass epoxy substrate;and a BT resin substrate.
 22. The method for producing thelight-emitting device according to claim 2, wherein the lead frameincludes a metal member containing Cu, Fe, Ni, Cr, Al, Ag, Au, Ti, or analloy of any of these.
 23. The method for producing the light-emittingdevice according to claim 2, wherein the wiring board or the lead frameis covered further with Ag, Au, Pt, Sn, Cu, Rh, or an alloy of any ofthese.